PART |
Description |
Maker |
TC514101AJ-70 TC514101AP-80 |
4M X 1 NIBBLE MODE DRAM, 70 ns, PDSO20 4M X 1 NIBBLE MODE DRAM, 80 ns, PDIP18
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AEPDH1M8LB-85 AEPDS1M8LB-85N AEPDS1M8LB-85P AEPDS1 |
Low Power, Low Noise, Quad Universal Filter Building Block; Package: SO; No of Pins: 16; Temperature Range: 0°C to 70°C Low Power, Low Noise, Quad Universal Filter Building Block; Package: SO; No of Pins: 24; Temperature Range: 0°C to 70°C Low Power, Low Noise, Quad Universal Filter Building Block; Package: SO; No of Pins: 16; Temperature Range: 0°C to 70°C x8内存,未定义建筑 x8 DRAM ModuleUndefined Architecture x8内存,未定义建筑 x8 Page Mode DRAM Module x8页面模式内存模块 x8 Static Column Mode DRAM Module x8静态列模式DRAM模块 x8 Nibble Mode DRAM Module x8半字节模式记忆体模组
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Lin Engineering, Inc. Unisonic Technologies Co., Ltd. Sullins Connector Solutions, Inc. Cypress Semiconductor, Corp.
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AS4C256K16F0-25JC AS4C256K16F0-25JI AS4C256K16F0-2 |
5V 256K x 16 CM0S DRAM (fast page mode), 30ns RAS access time x16FastPageModeDRAM
5V 256K X 16 CMOS DRAM (Fast Page Mode) 5V 256K x 16 CM0S DRAM (fast page mode), 35ns RAS access time 5V 256K x 16 CM0S DRAM (fast page mode), 50ns RAS access time 5V 256K x 16 CM0S DRAM (fast page mode), 25ns RAS access time
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Alliance Semiconductor Corporation
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IS41C44002-50TI IS41LV44002-50T IS41C44004-50T IS4 |
4M x 4 DRAM With EDO Page Mode(3.3V,4M x 4 带扩展数据输出页模式动态RAM(刷新 2K 4米4的DRAM与江户页面模式(3.3伏,4米4带扩展数据输出页模式动态随机存储器(刷k)的 x4 EDO Page Mode DRAM x4 EDO公司页面模式的DRAM
|
Integrated Silicon Solution, Inc.
|
AK491024GP-12 AK491024GK-12 AK491024GK-80 AK491024 |
x(8 1) Page Mode DRAM Module × 1)静态列模式DRAM模块 × 1)页面模式内存模 x(8 1) Static Column Mode DRAM Module ×8 1)静态列模式DRAM模块
|
Molex, Inc.
|
IBM11N4645CB-60J IBM11N4735CB-50J |
x64 EDO Page Mode DRAM Module X64的EDO公司页面模式内存模块 x72 EDO Page Mode DRAM Module x72 EDO公司页面模式内存模块
|
Unisonic Technologies Co., Ltd. Electronic Theatre Controls, Inc.
|
AM9016DDC AM9016DPC |
16K X 1 PAGE MODE DRAM, 250 ns, CDIP16 16K X 1 PAGE MODE DRAM, 250 ns, PDIP16
|
ADVANCED MICRO DEVICES INC
|
MSC2323258A MSC2323258A-XXBS4 MSC2323258A-XXDS4 |
2097152-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO 2,097,152-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO DPDT 10A MINI 24VDC 2097152字32位DRAM模块:快速页面模式型与江
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OKI electronic components OKI[OKI electronic componets] OKI SEMICONDUCTOR CO., LTD.
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MSC23V47257TA-XXBS18 MSC23V47257SA-XXBS18 MSC23V47 |
4,194,304-Word ′ 72-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO 4194304-Word 72-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO 4,194,304-Word 72-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO 4,194,304-Word ? 72-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO 4,194,304-Word 72-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO 4194304词?72位DRAM模块:快速页面模式型与江
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OKI electronic components OKI[OKI electronic componets] OKI SEMICONDUCTOR CO., LTD.
|
HYB5118165BST-60 HYB5118165BST-50 HYB5118165BSJ-60 |
1M x 16 Bit 1k 5 V 60 ns EDO DRAM 1M x 16 Bit 1k 3.3 V 60 ns EDO DRAM 1M x 16 Bit 1k 5 V 50 ns EDO DRAM -1M x 16-Bit Dynamic RAM 1k Refresh 1M x 16 Bit 1k 3.3 V 50 ns EDO DRAM 1M x 16-Bit Dynamic RAM 1k Refresh (Hyper Page Mode-EDO) From old datasheet system
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Infineon SIEMENS[Siemens Semiconductor Group]
|
GM71C18163BT-8 GM71C18163BJ-6 GM71C18163BJ-8 GM71C |
1,048,576 words x 16 bit DRAM, 80ns, low power 1,048,576 words x 16 bit DRAM, 70ns, low power 1,048,576 words x 16 bit DRAM, 60ns, low power x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
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LG Semiconductor
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